Selective Release of Excitatory‐Inhibitory Neurotransmitters Emulated by Unipolar Synaptic Transistors via Gate Voltage Amplitude Modulation-Reference-Cited by-同舟云学术

Selective Release of Excitatory‐Inhibitory Neurotransmitters Emulated by Unipolar Synaptic Transistors via Gate Voltage Amplitude Modulation

Published:2022-12-03 Issue:5 Volume:8 Page:2201367
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv Materials Technologies

Author:

Chen Ye¹,Hua Jing¹,Li Yueqing¹,Zhang Qi¹,Shao He¹,Li Wen¹,Ling Haifeng¹^ORCID,Xu Xiangxing²,Huang Wei¹³,Yi Mingdong¹

Affiliation:

1. State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications Nanjing 210023 P. R. China

2. Jiangsu Key Laboratory of Biofunctional Materials School of Chemistry and Materials Science Nanjing Normal University Nanjing 210023 P. R. China

3. Frontiers Science Center for Flexible Electronics MIIT Key Laboratory of Flexible Electronics Northwestern Polytechnical University Xi'an 710072 P. R. China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202201367

Reference31 articles.

1. Electrical synapses and their functional interactions with chemical synapses

2. Synaptic computation