A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2-Reference-Cited by-同舟云学术

A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2

Published:2015 Issue:17 Volume:7 Page:7802-7810
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kranthi Kumar V.¹²³,Dhar Sukanya¹²³,Choudhury Tanushree H.⁴²³,Shivashankar S. A.¹²³,Raghavan Srinivasan¹²³⁴²

Affiliation:

1. Centre for Nano Science and Engineering

2. Indian Institute of Science

3. Bangalore 560012, India

4. Materials Research Centre

Abstract

A generic approach suitable to all TMDs has been demonstrated. Thermodynamic modeling identifies the appropriate CVD process window and the growth is controlled by tuning the vapor phase supersaturation. Consequently MoS₂ growth, bulk to monolayers, has been achieved.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C4NR07080A

Reference39 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Graphene: Status and Prospects

4. The rise of graphene

5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

Cited by 125 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction;Scientific Reports;2024-09-13

2. Thermodynamic Modeling of Carbonaceous Coating of Oxides and Sulfides Thin Films Grown by CVD for Enhancing Surface Quality;Novel Anti‐Corrosion and Anti‐Fouling Coatings and Thin Films;2024-08-30

3. Few-Layer MoS₂ on a SiO₂/Si Wafer through Sulfurization Chemical Vapor Deposition with a Vaporization-Shadowing Effect;ACS Applied Nano Materials;2024-08-26

4. Gate Modulation of Barrier Height of Unipolar Vertically Stacked Monolayer ReS2 / MoS2 Heterojunction.;2024-08-14

5. Bismuth tri-iodide – Graphene 2D material;Journal of Crystal Growth;2024-08