Oxidized carbon quantum dot–graphene oxide nanocomposites for improving data retention of resistive switching memory-Reference-Cited by-同舟云学术

Oxidized carbon quantum dot–graphene oxide nanocomposites for improving data retention of resistive switching memory

Published:2018 Issue:8 Volume:6 Page:2026-2033
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Qi Meng¹²³⁴,Bai Liang⁵⁶⁷⁸⁴,Xu Haiyang¹²³⁴^ORCID,Wang Zhongqiang¹²³⁴,Kang Zhenhui⁵⁶⁷⁸⁴^ORCID,Zhao Xiaoning¹²³⁴,Liu Weizhen¹²³⁴,Ma Jiangang¹²³⁴^ORCID,Liu Yichun¹²³⁴

Affiliation:

1. Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University)

2. Ministry of Education

3. Changchun

4. China

5. Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices

6. Institute of Functional Nano and Soft Materials (FUNSOM)

7. Soochow University

8. Suzhou

Abstract

Data retention was improved in GO-based RRAM through fabricating OCQD–GO nanocomposites, thanks to the increase in the oxygen group migration barrier.

Funder

National Natural Science Foundation of China

People's Government of Jilin Province

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC04829G

Reference47 articles.

1. Nanoionics-based resistive switching memories