Electrically pumped random lasing with an onset voltage of sub-3 V from ZnO-based light-emitting devices featuring nanometer-thick MoO3interlayers-Reference-Cited by-同舟云学术

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Electrically pumped random lasing with an onset voltage of sub-3 V from ZnO-based light-emitting devices featuring nanometer-thick MoO3interlayers

Published:2015 Issue:20 Volume:7 Page:9164-9168
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Can-Xing,Lv Chun-Yan,Zhu Chen,Gao Zhi-Fei,Li Dong-Sheng,Ma Xiang-Yang,Yang De-Ren

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR01562F

Reference22 articles.

1. A comprehensive review of ZnO materials and devices

2. Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

3. Random Laser Action in Semiconductor Powder

4. UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes

5. Electrically pumped ZnO film ultraviolet random lasers on silicon substrate

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1. Evolution from random lasing to erbium-related electroluminescence from metal-insulator-semiconductor structured light-emitting device with erbium-doped ZnO film on silicon;Journal of Applied Physics;2020-02-07

2. Effect of Ag doping on the properties of ZnO thin films for UV stimulated emission;Physica B: Condensed Matter;2018-06

3. Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal–insulator–semiconductor structures;Applied Physics Express;2017-11-14

4. Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures;Journal of Applied Physics;2017-10-28

5. Microstructure and photoluminescence of MoOx decorated ZnO nanorods;Chinese Journal of Physics;2017-04

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