Affiliation:
1. State Key Laboratory of Crystal Materials
2. Shandong University
3. Jinan 250100
4. China
5. Key Laboratory of Functional Crystal Materials and Device
6. School of Chemistry and Chemical Engineering
7. Xuzhou Institute of Technology
8. Xuzhou 221018
9. P.R. China
Funder
Key Technology Research and Development Program of Shandong
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
China Postdoctoral Science Foundation
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference39 articles.
1. Recent progress in the growth of β-Ga2O3 for power electronics applications
2. A review of Ga2O3materials, processing, and devices
3. Recent progress on the electronic structure, defect, and doping properties of Ga2O3
4. A. Kuramata , K.Koshi , S.Watanabe , Y.Yamaoka , T.Masui and S.Yamakoshi , Bulk crystal growth of Ga2O3, in Oxide-based Materials and Devices IX , International Society for Optics and Photonics , 2018 , vol. 10533 , p. 105330E
5. Large-size β-Ga2O3 single crystals and wafers
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