A study on the technical improvement and the crystalline quality optimization of columnar β-Ga2O3 crystal growth by an EFG method-Reference-Cited by-同舟云学术

A study on the technical improvement and the crystalline quality optimization of columnar β-Ga2O3 crystal growth by an EFG method

Published:2020 Issue:30 Volume:22 Page:5060-5066
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Fu Bo¹²³⁴,Mu Wenxiang¹²³⁴⁵,Zhang Jin¹²³⁴,Wang Xiqiu⁶⁷⁸⁹,Zhuang Wenchang⁶⁷⁸⁹,Yin Yanru¹²³⁴⁵,Jia Zhitai¹²³⁴⁵^ORCID,Tao Xutang¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials

2. Shandong University

3. Jinan 250100

4. China

5. Key Laboratory of Functional Crystal Materials and Device

6. School of Chemistry and Chemical Engineering

7. Xuzhou Institute of Technology

8. Xuzhou 221018

9. P.R. China

Abstract

Innovative technology assessment and crystalline quality optimization of columnar β-Ga₂O₃ crystal growth were performed via an EFG method.

Funder

Key Technology Research and Development Program of Shandong

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00683A

Reference39 articles.

1. Recent progress in the growth of β-Ga2O3 for power electronics applications

2. A review of Ga2O3materials, processing, and devices

3. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

4. A. Kuramata , K.Koshi , S.Watanabe , Y.Yamaoka , T.Masui and S.Yamakoshi , Bulk crystal growth of Ga2O3, in Oxide-based Materials and Devices IX , International Society for Optics and Photonics , 2018 , vol. 10533 , p. 105330E

5. Large-size β-Ga2O3 single crystals and wafers

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropies of Structure, Optical Properties, Contact, and Epitaxy on (101)- and (001)-Oriented β-Ga₂O₃ Crystal Planes;ACS Applied Optical Materials;2023-08-29

2. Annealing modification and defect analysis of Hg2Br2 crystal;Ceramics International;2023-08

3. The surface tension of Ga₂O₃ melt measured by a drop-weight method in an optical floating-zone furnace;Semiconductor Science and Technology;2023-07-05

4. The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal;Materials Science in Semiconductor Processing;2023-05

5. Growth of (100) β-Ga₂O₃ single crystal by controlling the capillary behaviors in EFG system;Japanese Journal of Applied Physics;2023-04-19