Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing-Reference-Cited by-同舟云学术

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Published:2023 Issue:38 Volume:15 Page:15675-15685
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Luo Qiufa¹^ORCID,Lu Jing¹,Jiang Feng²,Lin Jiaming¹,Tian Zige³

Affiliation:

1. Institute of Manufacturing Engineering, Huaqiao University, Xiamen, 361021, Fujian Province, P.R. China

2. National & Local Joint Engineering Research Center for Intelligent Manufacturing Technology of Brittle Material Products, Xiamen 361021, Fujian Province, PR China

3. College of Mechanical Engineering, Baoji University of Arts and Sciences, Baoji, 721013, Shanxi Province, P.R. China

Abstract

Material removal mechanisms of abrasives for SiC and sapphire in nanoscale polishing.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR02353B

Reference48 articles.

1. Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

2. Utilizing Site Disorder in the Development of New Energy-Relevant Semiconductors

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Deformation and removal of semiconductor and laser single crystals at extremely small scales

5. Material Removal Mechanisms in Lapping and Polishing

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