Strong Fermi-level pinning at metal contacts to halide perovskites-Reference-Cited by-同舟云学术

Strong Fermi-level pinning at metal contacts to halide perovskites

Published:2021 Issue:42 Volume:9 Page:15212-15220
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hong Kootak¹²,Kwon Ki Chang¹,Choi Kyoung Soon³^ORCID,Le Quyet Van⁴^ORCID,Kim Seung Ju¹,Han Ji Su¹,Suh Jun Min¹^ORCID,Kim Soo Young⁵^ORCID,Sutter-Fella Carolin M.²^ORCID,Jang Ho Won¹⁶^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea

2. Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

3. National Research Facilities and Equipment Center, Korea Basic Science Institute, Daejeon 34133, Republic of Korea

4. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

5. Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea

6. Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea

Abstract

The extrinsic Pb0 interfacial trap states induce strong Fermi-level pinning at metal/CH3NH3PbI3 interfaces. This is due to the interfacial reaction between the deposited metals and iodine from CH3NH3PbI3.

Funder

Office of Science

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

U.S. Department of Energy

Ministry of Education

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03370K