Structural convergence properties of amorphous InGaZnO4 from simulated liquid-quench methods
Author:
Affiliation:
1. Department of Chemistry
2. Oregon State University
3. Corvallis
4. USA
5. School of EECS
6. Earth and Planetary Sciences
7. University of California - Davis
8. Davis
Abstract
Fast, refined models of amorphous IGZO are made possible by new pair potentials, convergence tests and X-ray total scattering show.
Funder
Argonne National Laboratory
Publisher
Royal Society of Chemistry (RSC)
Subject
Inorganic Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/DT/C7DT02181J
Reference21 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors
4. Photovoltaic properties of n-type amorphous In–Ga–Zn–O and p-type single crystal Si heterojunction solar cells: Effects of Ga content
5. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT
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