Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition-Reference-Cited by-同舟云学术

Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

Published:2019 Issue:21 Volume:7 Page:6332-6336
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Minohara Makoto¹²³⁴^ORCID,Kikuchi Naoto¹²³⁴^ORCID,Yoshida Yoshiyuki¹²³⁴^ORCID,Kumigashira Hiroshi⁵⁶⁷⁸⁴,Aiura Yoshihiro¹²³⁴^ORCID

Affiliation:

1. Electronics and Photonics Research Institute

2. National Institute of Advanced Industrial Science and Technology (AIST)

3. Ibaraki 305-8568

4. Japan

5. Photon Factory

6. Institute of Materials Structure Science (IMSS)

7. High Energy Accelerator Research Organization (KEK)

8. Ibaraki 305-0801

Abstract

Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. The hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth temperature.

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

High Energy Accelerator Research Organization

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC01297D

Reference31 articles.

1. Recent progress in transparent oxide semiconductors: Materials and device application

2. p-channel thin-film transistor using p-type oxide semiconductor, SnO

3. Identification and design principles of low hole effective mass p-type transparent conducting oxides

4. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

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