Electrical switching properties and structural characteristics of GeSe–GeTe films-Reference-Cited by-同舟云学术

Electrical switching properties and structural characteristics of GeSe–GeTe films

Published:2019 Issue:4 Volume:11 Page:1595-1603
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ren Kun¹²³⁴⁵^ORCID,Zhu Min¹²³⁴⁵^ORCID,Song Wenxiong¹²³⁴⁵,Lv Shilong¹²³⁴⁵,Xia Mengjiao⁶⁷⁸⁹¹⁰,Wang Yong¹²³⁴⁵,Lu Yaoyao¹²³⁴⁵,Ji Zhenguo¹¹¹²¹³⁵,Song Zhitang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics

2. Shanghai Institute of Micro-System and Information Technology

3. Chinese Academy of Sciences

4. Shanghai 200050

5. People's Republic of China

6. International Laboratory of Quantum Functional Materials of Henan

7. School of Physics and Engineering

8. Zhengzhou University

9. Zhengzhou 450001

10. China

11. Hangzhou Dianzi Univ.

12. Coll Mat & Environm Engn

13. Hangzhou

Abstract

The local structural motifs in GeSe–GeTe have been determined, which is essential to understand its thermal and electrical switching behavior.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR07832G

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