Disorder Control in Crystalline GeSb2Te4Using High Pressure-Reference-Cited by-同舟云学术

Disorder Control in Crystalline GeSb2Te4Using High Pressure

Published:2015-06-30 Issue:8 Volume:2 Page:1500117
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Xu Ming¹,Zhang Wei¹,Mazzarello Riccardo²,Wuttig Matthias¹³

Affiliation:

1. Institute of Physics (IA); RWTH Aachen University; Aachen 52074 Germany

2. Institute for Theoretical Solid State Physics; RWTH Aachen University; Aachen 52074 Germany

3. JARA-FIT and JARA-HPC; RWTH Aachen University; Aachen 52056 Germany

Funder

Seventh Framework Programme

Excellence Initiative of the German federal and state governments

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/advs.201500117/fullpdf

Reference47 articles.

1. Absence of Diffusion in Certain Random Lattices

2. Disorder-induced localization in crystalline phase-change materials

3. Role of vacancies in metal–insulator transitions of crystalline phase-change materials

4. Direct Observation of Metal–Insulator Transition in Single-Crystalline Germanium Telluride Nanowire Memory Devices Prior to Amorphization

5. Impact of vacancy ordering on thermal transport in crystalline phase-change materials

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