Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn-Reference-Cited by-同舟云学术

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Spin-gapless semiconducting characteristics and related band topology of quaternary Heusler alloy CoFeMnSn

Published:2024 Issue:2 Volume:12 Page:706-716
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Gupta Shuvankar¹^ORCID,Sau Jyotirmoy²,Kumar Manoranjan²,Mazumdar Chandan¹^ORCID

Affiliation:

1. Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064, India

2. Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, JD Block, Sector III, Salt Lake, Kolkata 700106, India

Abstract

This study presents the synthesis, structural analysis, magnetic behavior, transport properties, and electronic characteristics of a novel spin-gapless semiconductor compound CoFeMnSn within the quaternary Heusler alloy.

Funder

Saha Institute of Nuclear Physics, Department of Atomic Energy, Government of India

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC03481J

Reference72 articles.

1. Half-metallic ferromagnets: From band structure to many-body effects

2. Spintronics: A Challenge for Materials Science and Solid-State Chemistry

3. New Class of Materials: Half-Metallic Ferromagnets

4. Proposal for a New Class of Materials: Spin Gapless Semiconductors

5. Recent advances in the Heusler based spin-gapless semiconductors

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1. The p-type (Mn1.5Co0.5)VAl Heusler alloy with high Curie temperature for spintronics device applications;Vacuum;2024-09

2. Structural, magnetic and transport properties of FeRuVZ (Z = Si, Ge) Heusler alloys: Experiment and theory;Journal of Alloys and Compounds;2024-09

3. Hydrostatic pressure-induced anomalous hall effect in Co₂FeSi semimetal;Electronic Structure;2024-02-15

4. Magnetic Semiconductors Obtained by Replacing One of the Atoms of a Quaternary Heusler Alloy with a Lanthanide Element;2024

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