Recent advances in the Heusler based spin-gapless semiconductors
Author:
Affiliation:
1. School of Material Sciences and Engineering
2. Hebei University of Technology
3. Tianjin 300130
4. P. R. China
5. Institute for Superconducting & Electronic Materials (ISEM)
6. University of Wollongong
7. Wollongong 2500
8. Australia
Abstract
In this work, we review the progress on the Heusler-based materials with spin-gapless semiconducting behaviour, including half-Heusler compounds, full-Heusler compounds, DO3-type compounds, and LiMgPdSn-type quaternary Heusler compounds.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC01343K
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