The formation of heterointerface defects in Au/Cu films on Si substrates under direct current in a vacuum ultraviolet environment-Reference-Cited by-同舟云学术

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The formation of heterointerface defects in Au/Cu films on Si substrates under direct current in a vacuum ultraviolet environment

Published:2016 Issue:5 Volume:18 Page:4019-4025
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yan Kai¹²³⁴⁵,Yao Wenqing⁵⁶⁷⁴,Yang Liping⁵⁶⁷⁴,Cao Jiangli¹²³⁴,Zhao Yuanyuan¹²³⁴,Zhao Lixia⁸⁹³⁴,Zhu Yongfa⁵⁶⁷⁴

Affiliation:

1. Institute of Advanced Materials and Technology

2. University of Science and Technology Beijing

3. Beijing 100083

4. China

5. Department of Chemistry

6. Tsinghua University

7. Beijing 100084

8. Institute of Semiconductors

9. Chinese Academy of Science

Abstract

The directed migration of atomic clusters was caused by the coupling effect of DC and UV, which aggravated the expansion of defects.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP06499F

Reference43 articles.

1. Synthesis and characterization in AuCu–Si nanostructures

2. Thin film annealing and alloying of a Au/Cu two-layer system studied by positron annihilation spectroscopy

3. Characterization of sputter deposited Au/Ni/Al multilayers on Si substrates

4. Finite-element analysis of the mechanical behavior of Au/Cu and Cu/Au multilayers on silicon substrate under nanoindentation

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