Kinetics of volatile impurity removal from silicon by electron beam melting for photovoltaic applications-Reference-Cited by-同舟云学术

Kinetics of volatile impurity removal from silicon by electron beam melting for photovoltaic applications

Published:2017 Issue:41 Volume:19 Page:28424-28433
ISSN:1463-9076
Container-title:Phys. Chem. Chem. Phys.
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Shi Shuang¹²³⁴⁵^ORCID,Li Pengting¹²³⁴⁵,Meng Jianxiong¹²³⁴⁵,Jiang Dachuan¹²³⁴⁵,Tan Yi¹²³⁴⁵^ORCID,Asghar H. M. Noor ul Huda Khan⁶⁷⁸⁹¹⁰

Affiliation:

1. School of Materials Science and Engineering

2. Dalian University of Technology

3. Dalian 116023

4. China

5. Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province

6. Department of Physics

7. Balochistan University of Information Technology

8. Engineering & Management Sciences

9. Quetta 87300

10. Pakistan

Abstract

A full domain control model is established to analyze the kinetics of volatile impurities removal from silicon by electron beam melting. The removal mechanisms of P, Al and Ca are clarified.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP05080A

Reference38 articles.

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4. Solar cells from upgraded metallurgical-grade silicon purified by metallurgical routes

5. Minority carrier lifetime and efficiency improvement of multicrystalline silicon solar cells by two-step process

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