Reversible switching in bicontinuous structure for phase change random access memory application-Reference-Cited by-同舟云学术

Reversible switching in bicontinuous structure for phase change random access memory application

Published:2021 Issue:8 Volume:13 Page:4678-4684
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Cheng Yan¹²³⁴⁵^ORCID,Zheng Yonghui¹²³⁴⁵,Song Zhitang⁶⁷⁸⁹⁵

Affiliation:

1. Key Laboratory of Polar Materials and Devices (MOE)

2. Department of Electronics

3. East China Normal University

4. Shanghai 200241

5. China

6. State Key Laboratory of Functional Materials for Informatics

7. Shanghai Institute of Microsystem and Information Technology

8. Chinese Academy of Sciences

9. Shanghai 200050

Abstract

A 3D nano-bicontinuous structure consisting of a reversible Sb₂Te₃ phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb₂Te₃ nano areas switch between the a- and f-structure.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Thermo Fisher Scientific

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR09139A

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