Band-gap-graded Cu2ZnSn(S,Se)4 drives highly efficient solar cells

Author:

Guo Hongling1ORCID,Meng Rutao1,Wang Gang2ORCID,Wang Shenghao3,Wu Li4ORCID,Li Jianjun5,Wang Zuoyun1,Dong Jiabin1,Hao Xiaojing5,Zhang Yi1ORCID

Affiliation:

1. Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin 300350, P. R. China

2. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun, Jilin, 130022, China

3. Materials Genome Institute, Shanghai University, Shanghai 200444, P. R. China

4. Key Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin 300071, China

5. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, Australia

Abstract

Band-gap-graded CZTSSe was formed successfully, and the carrier transport through the p-n junction was improved greatly; thus, the power conversion efficiency was increased by 45%.

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

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