Vertical plane depth‐resolved surface potential and carrier separation characteristics in flexible CZTSSe solar cells with over 12% efficiency

Author:

Son Dae‐Ho12,Park Ha Kyung3,Kim Dae‐Hwan12,Kang Jin‐Kyu12,Sung Shi‐Joon12,Hwang Dae‐Kue12,Lee Jaebaek12,Jeon Dong‐Hwan12ORCID,Cho Yunae3,Jo William3,Lee Taeseon4,Kim JunHo4,Nam Sang‐Hoon5,Yang Kee‐Jeong12ORCID

Affiliation:

1. Division of Energy Technology, DGIST Daegu Republic of Korea

2. Research Center for Thin Film Solar Cells, DGIST Daegu Republic of Korea

3. Department of Physics Ewha Womans University Seoul Republic of Korea

4. Department of Physics Incheon National University Incheon Republic of Korea

5. Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge Massachusetts USA

Abstract

AbstractCu2ZnSn(S,Se)4 (CZTSSe) solar cells have resource distribution and economic advantages. The main cause of their low efficiency is carrier loss resulting from recombination of photo‐generated electron and hole. To overcome this, it is important to understand their electron‐hole behavior characteristics. To determine the carrier separation characteristics, we measured the surface potential and the local current in terms of the absorber depth. The elemental variation in the intragrains (IGs) and at the grain boundaries (GBs) caused a band edge shift and bandgap (Eg) change. At the absorber surface and subsurface, an upward Ec and Ev band bending structure was observed at the GBs, and the carrier separation was improved. At the absorber center, both upward Ec and Ev and downward Ec‐upward Ev band bending structures were observed at the GBs, and the carrier separation was degraded. To improve the carrier separation and suppress carrier recombination, an upward Ec and Ev band bending structure at the GBs is desirable.

Funder

National Research Foundation of Korea

Publisher

Wiley

Reference58 articles.

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