Energy-efficient transistors: suppressing the subthreshold swing below the physical limit-Reference-Cited by-同舟云学术

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Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

Published:2021 Issue:6 Volume:8 Page:1601-1617
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Zhai Yongbiao¹²³,Feng Zihao⁴²³,Zhou Ye⁴²³^ORCID,Han Su-Ting¹²³^ORCID

Affiliation:

1. Institute of Microscale Optoelectronics

2. Shenzhen University

3. P. R. China

4. Institute for Advanced Study

Abstract

We review the physics, design, and optimization of four steep-slope transistors and demonstrate their potential and drawbacks.

Funder

National Natural Science Foundation of China

Guangdong Science and Technology Department

Shenzhen Science and Technology Innovation Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/MH/D0MH02029J

Reference168 articles.

1. The chips are down for Moore’s law

2. Cramming More Components Onto Integrated Circuits

3. Science and research policy at the end of Moore’s law

4. Design of ion-implanted MOSFET's with very small physical dimensions

5. Scalability assessment of Group-IV mono-chalcogenide based tunnel FET

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