Electronic structures and band alignments of monolayer metal trihalide semiconductors MX3-Reference-Cited by-同舟云学术

Electronic structures and band alignments of monolayer metal trihalide semiconductors MX3

Published:2017 Issue:35 Volume:5 Page:9066-9071
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liu Pan¹²³⁴^ORCID,Lu Feng¹²³⁴,Wu Maokun¹²³⁴,Luo Xiaoguang¹²³⁴,Cheng Yahui¹²³⁴^ORCID,Wang Xue-Wei⁵⁶⁷⁴,Wang Weichao¹²³⁴⁸,Wang Wei-Hua¹²³⁴,Liu Hui¹²³⁴,Cho Kyeongjae¹²³⁴⁸^ORCID

Affiliation:

1. Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology

2. Nankai University

3. Tianjin

4. China

5. School of Materials Science and Engineering

6. Tianjin University of Technology

7. Tianjin 300384

8. Department of Material Science and Engineering

Abstract

Monolayers of metal trihalide MX₃ can feasibly be exfoliated from their bulk materials and they have large band gaps.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03003G

Reference27 articles.

1. Boron Nitride Nanotubes and Nanosheets

2. Ab Initio determination of Cu 3d orbital energies in layered copper oxides

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. A class of monolayer metal halogenides MX2: Electronic structures and band alignments

5. Graphene-Like Two-Dimensional Materials

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