Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires-Reference-Cited by-同舟云学术

Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires

Published:2022 Issue:16 Volume:4 Page:3330-3341
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Gómez Víctor J.¹²^ORCID,Marnauza Mikelis³^ORCID,Dick Kimberly A.²³,Lehmann Sebastian²^ORCID

Affiliation:

1. Nanophotonics Technology Center, Universidad Politécnica de Valencia, Camino de Vera, s/n Building 8F | 2a Floor, 46022 Valencia, Spain

2. Solid State Physics and NanoLund, Lund University, Box 118, S-221 00 Lund, Sweden

3. Centre for Analysis and Synthesis and NanoLund, Lund University, Box 124, 221 00, Lund, Sweden

Abstract

Growth rate and growth time are the two key factors governing the crystal phase and facet dependent selective growth in the GaAs/InAs core/shell system. In addition, we demonstrate control over the shell thickness and selectivity.

Funder

Knut och Alice Wallenbergs Stiftelse

Generalitat Valenciana

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00109H

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