A first-principles study of the switching mechanism in GeTe/InSbTe superlattices-Reference-Cited by-同舟云学术

A first-principles study of the switching mechanism in GeTe/InSbTe superlattices

Published:2020 Issue:11 Volume:2 Page:5209-5218
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Ribaldone Chiara¹²³⁴^ORCID,Dragoni Daniele¹²³⁴^ORCID,Bernasconi Marco¹²³⁴^ORCID

Affiliation:

1. Dipartimento di Scienza dei Materiali

2. Università di Milano-Bicocca

3. I-20125 Milano

4. Italy

Abstract

Via density functional theory calculations, we devise a novel strain-engineered GeTe₃/In₃SbTe₂ superlattice to reduce the power consumption of interfacial phase change memories.

Funder

Horizon 2020 Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NA/D0NA00577K

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