An ab initio approach on the asymmetric stacking of GaAs 〈111〉 nanowires grown by a vapor–solid method
Author:
Affiliation:
1. Center for Electronic Materials
2. Korea Institute of Science and Technology
3. Seoul 02792
4. Korea
5. Department of Materials Science and Engineering
6. Inter-University Semiconductor Research Center
7. Seoul National University
8. Seoul 08826
Abstract
This study provides an ab initio thermodynamics approach to take a step forward in the theoretical modeling on the growth of GaAs nanowires.
Funder
Ministry of Trade, Industry and Energy
Korea Institute of Science and Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR02010A
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