Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography-Reference-Cited by-同舟云学术

Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography

Published:2016 Issue:5 Volume:6 Page:3617-3622
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Han Bin¹²³⁴⁵,Shimizu Yasuo¹²³⁴⁵^ORCID,Seguini Gabriele⁶⁷⁸⁹,Arduca Elisa⁶⁷⁸⁹¹⁰,Castro Celia¹¹¹²¹³¹⁴¹⁵,Ben Assayag Gérard¹¹¹²¹³¹⁴¹⁵,Inoue Koji¹²³⁴⁵,Nagai Yasuyoshi¹²³⁴⁵,Schamm-Chardon Sylvie¹¹¹²¹³¹⁴¹⁵,Perego Michele⁶⁷⁸⁹

Affiliation:

1. The Oarai Center

2. Institute for Materials Research

3. Tohoku University

4. Oarai

5. Japan

6. Laboratorio MDM

7. IMM-CNR

8. 20864 Agrate Brianza

9. Italy

10. Dipartimento di Fisica

11. CEMES-CNRS

12. Université de Toulouse

13. nMat group

14. 31055 Toulouse Cedex 4

15. France

Abstract

The dependence of the shape, size, and areal density of Si NCs on the thickness of the initial SiO layer was investigated using atom probe tomography and validated by energy filtered transmission electron microscopy.

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA26710B

Reference47 articles.

1. A Membrane Device for Substrate-Free Photovoltaic Characterization of Quantum Dot Based p-i-n Solar Cells

2. Direct generation of multiple excitons in adjacent silicon nanocrystals revealed by induced absorption

3. Recent progress in lasers on silicon