Engineering the electronic band structure and thermoelectric performance of GeTe via lattice structure manipulation from first-principles-Reference-Cited by-同舟云学术

Engineering the electronic band structure and thermoelectric performance of GeTe via lattice structure manipulation from first-principles

Published:2021 Issue:41 Volume:23 Page:23576-23585
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wang Tianyu¹²,Zhang Chun³,Yang Jia-Yue¹²^ORCID,Liu Linhua¹²

Affiliation:

1. School of Energy and Power Engineering, Shandong University, Jinan, Shandong 250061, China

2. Optics & Thermal Radiation Research Center, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, China

3. Beijing Institute of Spacecraft System Engineering, Beijing 100094, China

Abstract

Atomic reciprocal displacement manipulates energy levels, indirect–direct band-gap transition and Rashba splitting of GeTe, and improves its thermoelectric performance.

Funder

National Natural Science Foundation of China

Shandong University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP03728E

Reference57 articles.

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3. Computer-aided design of high-efficiency GeTe-based thermoelectric devices

4. Semiconductor materials for thermoelectric power generation up to 700 C

5. Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

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