Performance and limits of 2.0 eV bandgap CuInGaS2 solar absorber integrated with CdS buffer on F:SnO2 substrate for multijunction photovoltaic and photoelectrochemical water splitting devices-Reference-Cited by-同舟云学术

Performance and limits of 2.0 eV bandgap CuInGaS2 solar absorber integrated with CdS buffer on F:SnO2 substrate for multijunction photovoltaic and photoelectrochemical water splitting devices

Published:2021 Issue:17 Volume:2 Page:5752-5763
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Gaillard Nicolas¹^ORCID,Septina Wilman¹,Varley Joel²,Ogitsu Tadashi²,Ohtaki Kenta K.³^ORCID,Ishii Hope A.³^ORCID,Bradley John P.³,Muzzillo Christopher⁴,Zhu Kai⁴^ORCID,Babbe Finn⁵,Cooper Jason⁵

Affiliation:

1. Hawaii Natural Energy Institute, University of Hawaii, Honolulu, Hawaii 96822, USA

2. Lawrence Livermore National Laboratory, Livermore, California 94550, USA

3. Hawaii Institute of Geophysics & Planetology, University of Hawaii, Honolulu, Hawaii 96822, USA

4. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

5. Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

Abstract

Photocurrent density in excess of 10 mA cm−2 reported on 2.0 eV CuInGaS2 solar cells integrated on SnO2:F substrates, yet new wide bandgap n-type buffers required to achieve higher photoconversion efficiency.

Funder

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Microbiology

Link

http://pubs.rsc.org/en/content/articlepdf/2021/MA/D1MA00570G

Reference72 articles.

1. Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

2. Controlled spalling-based mechanical substrate exfoliation for III-V solar cells: A review

3. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency