A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides-Reference-Cited by-同舟云学术

A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides

Published:2016 Issue:95 Volume:6 Page:93219-93230
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Darmakkolla Srikar Rao¹²³,Tran Hoang¹²³,Gupta Atul¹²³,Rananavare Shankar B.¹²³

Affiliation:

1. Department of Chemistry

2. Portland State University

3. USA

Abstract

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

Funder

Intel Corporation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA20355H

Reference69 articles.

1. Corrosion Behavior of Copper Thin Films in Organic HF-Containing Cleaning Solution for Semiconductor Applications

2. Reducing the effects of shot noise using nanoparticles

3. PECVD, or plasma enhanced chemical vapor deposition is a variant of chemical vapor deposition technique used in semiconductor processing. It involves a use of plasma generated by radio frequency (typically at 13.56 MHz) or DC to break chemical precursors to produce reactive/ionic species. The reaction products from the gaseous phase are commonly deposited on an electrically biased surface. For more details see: https://en.wikipedia.org/wiki/Plasma-enhanced_chemical_vapor_deposition

4. Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxane

5. Amorphous carbon based materials as the interconnect dielectric in ULSI chips

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