Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite-Reference-Cited by-同舟云学术

Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite

Published:2022 Issue:8 Volume:10 Page:4355-4365
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Ratz Thomas¹²^ORCID,Nguyen Ngoc Duy¹^ORCID,Brammertz Guy³^ORCID,Vermang Bart²³⁴^ORCID,Raty Jean-Yves¹

Affiliation:

1. CESAM | Q-MAT | Solid State Physics, Interfaces and Nanostructures, University of Liège, Allée du Six Août 19, B-4000 Liège, Belgium

2. Institute for Material Research (IMO), Hasselt University, Agoralaan gebouw H, B-3590 Diepenbeek, Belgium

3. IMEC Division IMOMEC | Partner in Solliance, Wetenschapspark 1, B-3590 Diepenbeek, Belgium

4. Energyville, Thor Park 8320, B-3600 Genk, Belgium

Abstract

Ge-containing kesterites for PV applications demonstrated their effectiveness in improving the cell VOC. The physical behaviour of defects is found to be a key mechanism, with the GeZn antisite appearing less detrimental than its SnZn counterpart.

Funder

Fonds De La Recherche Scientifique – FNRS

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TA/D1TA09620F

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