Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy-Reference-Cited by-同舟云学术

Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Published:2018 Issue:39 Volume:8 Page:21968-21974
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chen Miao¹²³⁴⁵,Zhou Bin¹²³⁴⁵,Wang Fang¹²³⁴⁵,Xu Liping¹²³⁴⁵,Jiang Kai¹²³⁴⁵,Shang Liyan¹²³⁴⁵,Hu Zhigao¹²³⁴⁵^ORCID,Chu Junhao¹²³⁴⁵

Affiliation:

1. Key Laboratory of Polar Materials and Devices (MOE)

2. Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai)

3. Department of Electronic Engineering

4. East China Normal University

5. Shanghai 200241

Abstract

The important interlayer coupling of the MoS₂–TaS₂ heterostructure and the phase transition mechanism of ultrathin 1T-TaS₂ are described.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA03436B

Reference39 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Valley depolarization dynamics and valley Hall effect of excitons in monolayer and bilayerMoS2

4. Heterostructure bipolar transistors and integrated circuits

5. High Performance PbS Quantum Dot/Graphene Hybrid Solar Cell with Efficient Charge Extraction

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