Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance-Reference-Cited by-同舟云学术

Double magnetic tunnel junctions with a switchable assistance layer for improved spin transfer torque magnetic memory performance

Published:2021 Issue:33 Volume:13 Page:14096-14109
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sanchez Hazen Daniel¹,Auffret Stéphane¹,Joumard Isabelle¹,Vila Laurent¹,Buda-Prejbeanu Liliana D.¹,Sousa Ricardo C.¹,Prejbeanu Lucian¹,Dieny Bernard¹^ORCID

Affiliation:

1. SPINTEC, Univ. Grenoble Alpes/CEA/CNRS, 38000-Grenoble, France

Abstract

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junctions comprising a magnetically switchable assistance layer.

Funder

H2020 European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR01656C

Reference26 articles.

1. Magnetoresistive Random Access Memory

2. Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

3. Impact of seed layer on post-annealing behavior of transport and magnetic properties of Co/Pt multilayer-based bottom-pinned perpendicular magnetic tunnel junctions

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