Enhancement of island size by dynamic substrate disorder in simulations of graphene growth-Reference-Cited by-同舟云学术

Enhancement of island size by dynamic substrate disorder in simulations of graphene growth

Published:2016 Issue:22 Volume:18 Page:15102-15109
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Enstone Gwilym¹²³⁴,Brommer Peter⁵²³⁴⁶^ORCID,Quigley David⁵²³⁴⁷,Bell Gavin R.⁷²³⁴

Affiliation:

1. Centre for Complexity Science

2. University of Warwick

3. Coventry

4. UK

5. Centre for Scientific Computing

6. Warwick Centre for Predictive Modelling

7. Department of Physics

Abstract

We demonstrate a new mechanism in the early stages of sub-monolayer epitaxial island growth, using Monte Carlo simulations motivated by experimental observations on the growth of graphene on copper foil.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP00788K

Reference49 articles.

1. Growth of epitaxial graphene: Theory and experiment

2. Mechanisms of graphene growth by chemical vapour deposition on transition metals

3. Weak mismatch epitaxy and structural Feedback in graphene growth on copper foil

4. van der Waals epitaxy of monolayer hexagonal boron nitride on copper foil: growth, crystallography and electronic band structure

5. Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

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