High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates-Reference-Cited by-同舟云学术

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High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates

Published:2020 Issue:38 Volume:22 Page:6268-6274
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Gogova D.¹²³⁴⁵^ORCID,Olsen V. S.¹²³⁴⁵,Bazioti C.¹²³⁴⁵^ORCID,Lee I.-H.¹²³⁴⁵^ORCID,Prytz Ø.¹²³⁴⁵^ORCID,Vines L.¹²³⁴⁵,Kuznetsov A. Yu.¹²³⁴⁵

Affiliation:

1. Department of Physics

2. Center for Materials Science and Nanotechnology

3. University of Oslo

4. NO-0316 Oslo

5. Norway

Abstract

Making a systematic effort, we have developed single-crystalline ZnSnN₂ on ZnO (0001) by reactive magnetron co-sputtering.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00861C

Reference27 articles.

1. B. Gil , Group III nitride semiconductors compounds: physics and applications , Clarendon Press , 1998

2. Growth of ZnSnN2 by Molecular Beam Epitaxy

3. Chemical environment and functional properties of highly crystalline ZnSnN2 thin films deposited by reactive sputtering at room temperature

4. Band Offset Engineering in ZnSnN2-Based Heterojunction for Low-Cost Solar Cells

5. Determination of the basic optical parameters of ZnSnN_2

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