High-temperature growth of ZnSnN2 layer via radiofrequency magnetron sputter epitaxy

Abstract

Abstract ZnSnN2 layers were grown directly on Al2O3 (0001) substrates via RF magnetron sputter epitaxy at various substrate temperatures using N2 gas and a ZnSn alloy target. The crystalline quality and surface morphology of the ZnSnN2 layers were examined. X-ray diffraction patterns indicated that ZnSnN2 layers grown at substrate temperatures of 600 °C and 700 °C had wurtzite-type structures. The gross full width at half maximum (FWHM) value of the X-ray rocking curve (XRC) for the (0002) plane of the ZnSnN2 layer grown at 700 °C was 324 arcsec. The XRC for the (0002) plane contained two components, and the FWHM values of these components were 206 and 1520 arcsec for the highly c-axis-oriented columnar domains and disordered structure inside the ZnSnN2 layer, respectively. Metallic Sn was detected in a ZnSnN2 layer grown at 800 °C.