n-Type KCu3S2microbelts: optical, electrical, and optoelectronic properties
Author:
Affiliation:
1. School of Electronic Science and Applied Physics
2. Hefei University of Technology
3. Hefei Anhui 230009, People's Republic of China
Abstract
We report the systematical optical, electrical and optoelectronic characterization of KCu3S2microbelt, which was proved to be a typical n-type semiconductor with a bandgap of 1.64 eVas well as a promising photovoltaic or photoelectronic material.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA12541J
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