Highly responsive photoconductance in a Sb2SeTe2 topological insulator nanosheet at room temperature-Reference-Cited by-同舟云学术

Highly responsive photoconductance in a Sb2SeTe2 topological insulator nanosheet at room temperature

Published:2017 Issue:62 Volume:7 Page:39057-39062
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Huang Shiu-Ming¹²³⁴^ORCID,Huang Shih-Jhe¹²³⁴,Yan You-Jhih⁵²³⁴,Yu Shih-Hsun⁵²³⁴,Chou Mitch⁵²³⁴⁶,Yang Hung-Wei⁷⁸⁹⁴,Chang Yu-Shin⁷⁸⁹⁴,Chen Ruei-San⁷⁸⁹⁴

Affiliation:

1. Department of Physics

2. National Sun Yat-Sen University

3. Kaohsiung 80424

4. Taiwan

5. Department of Materials and Optoelectronic Science

6. Taiwan Consortium of Emergent Crystalline Materials, TCECM

7. Graduate Institute of Applied Science and Technology

8. National Taiwan University of Science and Technology

9. Taipei 10607

Abstract

SEM picture of the Sb₂SeTe₂ nanosheet. The top-right figure shows the linear current–voltage curve indicating the ohmic contact between the Pt electrodes and Sb₂SeTe₂ nanosheet.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA06151J

Reference44 articles.

1. Ultrafast graphene photodetector

2. Graphene photodetectors for high-speed optical communications

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4. Broadband Photodetectors Based on Graphene–Bi2Te3 Heterostructure

5. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

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