Study on the effect of Sn concentration on the structural, optical, and electrical properties of (Al0.55In0.45)2O3:Sn films-Reference-Cited by-同舟云学术

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Study on the effect of Sn concentration on the structural, optical, and electrical properties of (Al0.55In0.45)2O3:Sn films

Published:2021 Issue:9 Volume:45 Page:4318-4325
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Xin Yangmei¹²³⁴,Zhang Dong¹²³⁴,Li Zizhan¹²³⁴,Qin Hua¹²³⁴,Xiu Junshan¹²³⁴,Li Zhao¹²³⁴^ORCID,Liu Yunyan¹²³⁴,Liu Huiqiang¹²³⁴

Affiliation:

1. School of Physics and Optoelectronic Engineering

2. Shandong University of Technology

3. Zibo 255000

4. China

Abstract

The MOVPE method is applied to deposit the (Al_0.55In_0.45)₂O₃:Sn films with high mobility as well as low resistivity.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NJ/D0NJ06088G

Reference40 articles.

1. Recent progress in transparent oxide semiconductors: Materials and device application

2. Carrier-controlled ferromagnetism in transparent oxide semiconductors

3. Transparent oxide optoelectronics

4. Highly conductive and transparent ITO films deposited at low temperatures by pulsed DC magnetron sputtering from ceramic and metallic rotary targets

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