Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

Published:2020 Issue:16 Volume:12 Page:8836-8846
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Peng¹²³⁴⁵^ORCID,Chen Hedong¹²³⁴⁵,Wang Hao⁶⁷⁸⁹¹⁰,Wang Xingyu¹²³⁴⁵,Yin Hongjie¹²³⁴⁵,Rao Lujia¹²³⁴⁵,Zhou Guofu¹²³⁴⁵,Nötzel Richard¹²³⁴⁵

Affiliation:

1. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology

2. South China Academy of Advanced Optoelectronics

3. South China Normal University

4. Guangzhou 510006

5. People's Republic of China

6. Research Institute for Soft Matter and Biomimetics

7. Fujian Provincial Key Laboratory for Soft Functional Materials Research

8. Department of Physics

9. Xiamen University

10. Xiamen 361005

Abstract

The In composition of InGaN nanowires grown on a pyramid-textured Si substrate was laterally tuned beyond the nanoscale with stationary plasma-assisted molecular beam epitaxy.

Funder

National Natural Science Foundation of China

Guangzhou Municipal Science and Technology Project

Ministry of Education of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00071J

Reference35 articles.

1. Surface-plasmon-enhanced light emitters based on InGaN quantum wells

2. Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells

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4. Influence of defects on the absorption edge of InN thin films: The band gap value

5. Optical properties of InGaN thin films in the entire composition range

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