Cathodoluminescence and field emission from GaN/MgAl2O4grown by metalorganic chemical vapor deposition: substrate-orientation dependence-Reference-Cited by-同舟云学术

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Cathodoluminescence and field emission from GaN/MgAl2O4grown by metalorganic chemical vapor deposition: substrate-orientation dependence

Published:2013 Issue:2 Volume:1 Page:238-245
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

He Gang,Chikyow Toyohiro,Chen Xiaoshuang,Chen Hanshuang,Liu Jiangwei,Sun Zhaoqi

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C2TC00012A

Reference39 articles.

1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

2. Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

3. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

4. Field emission properties of amorphous GaN ultrathin films fabricated by pulsed laser deposition

5. Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

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1. Combustion synthesis and photoelectrochemical characterization of gallium zinc oxynitrides;Journal of Materials Research;2018-11-06

2. Current-Fluctuation Mechanism of Field Emitters Using Metallic Single-Walled Carbon Nanotubes with High Crystallinity;Applied Sciences;2017-12-19

3. A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition;Vacuum;2016-06

4. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices;Surface Science Reports;2015-11

5. Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET);Sensors and Actuators B: Chemical;2014-01

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