Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems-Reference-Cited by-同舟云学术

Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems

Published:2023 Issue:37 Volume:11 Page:12675-12684
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Min-Joong¹,Kim Woo-Seok¹^ORCID,Kim Chang-Hyun²^ORCID,Kwon Jin-Hyuk³,Kim Min-Hoi¹³^ORCID

Affiliation:

1. Department of Creative Convergence Engineering, Hanbat National University, Daejeon 34158, Republic of Korea

2. School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea

3. Research Institute of Printed Electronics & 3D Printing, Industry University Cooperation Foundation, Hanbat National University, Daejeon 34158, Republic of Korea

Abstract

A heterogeneous bimetallic system, composed of two metallic thin films with inherently different Fermi levels, is potentially usable for the fine tuning of interfacial charge dynamics.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC02561F

Reference38 articles.

1. Ultrafast hot-hole injection modifies hot-electron dynamics in Au/p-GaN heterostructures

2. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

3. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

4. Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky-Barrier Devices

5. Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit

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