Exploration of the intrinsic factors limiting the photocurrent density in ferroelectric BiFeO3 thin film-Reference-Cited by-同舟云学术

Exploration of the intrinsic factors limiting the photocurrent density in ferroelectric BiFeO3 thin film

Published:2020 Issue:14 Volume:8 Page:6863-6873
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Shah Jafar Hussain¹²³⁴⁵,Ye Hengyun⁶⁷⁸⁹,Liu Yong¹²³⁴⁵,Idris Ahmed Mahmoud¹²³⁴⁵,Malik Anum Shahid¹²³⁴⁵,Zhang Yi⁶⁷⁸⁹^ORCID,Han Hongxian¹²³⁴⁵^ORCID,Li Can¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Catalysis & Division of Solar Energy

2. Dalian National Laboratory for Clean Energy

3. Dalian Institute of Chemical Physics

4. Chinese Academy of Sciences

5. Dalian

6. Department of Chaotic Matter Science Research Center

7. Jiangxi University of Science and Technology

8. Nanchang 330013

9. P. R. China

Abstract

The limiting factor for low photocurrent density of polarization switchable ferroelectric BiFeO₃ film is due to severe charge recombination at the interfaces of the domain walls rather than recombination inside the domains.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TA/D0TA00955E

Reference69 articles.

1. Multifunctional BiFeO3/TiO2 nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

2. Fabrication of CaFe2O4/TaON Heterojunction Photoanode for Photoelectrochemical Water Oxidation