Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2-Reference-Cited by-同舟云学术

Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2

Published:2017-09-20 Issue:10 Volume:17 Page:5962-5968
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kerelsky Alexander,Nipane Ankur,Edelberg Drew,Wang Dennis,Zhou Xiaodong,Motmaendadgar Abdollah,Gao Hui¹²,Xie Saien²³,Kang Kibum¹²,Park Jiwoong¹²,Teherani James,Pasupathy Abhay^ORCID

Affiliation:

1. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States

2. Department of Chemistry, Institute for Molecular Engineering, and Frank Institute, University of Chicago, Chicago, Illinois 60637, United States

3. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States

Funder

Air Force Office of Scientific Research

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b01986

Reference40 articles.

1. Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy

2. Tunable band gaps in bilayer transition-metal dichalcogenides

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Negative electronic compressibility and tunable spin splitting in WSe2

5. Spin and pseudospins in layered transition metal dichalcogenides

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