The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment-Reference-Cited by-同舟云学术

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The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment

Published:2019 Issue:37 Volume:11 Page:17368-17375
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Moon Inyong¹²³⁴,Lee Sungwon¹²³⁴,Lee Myeongjin¹²³⁴,Kim Changsik¹²³⁴,Seol Daehee⁵²³⁶,Kim Yunseok⁵²³⁶^ORCID,Kim Ki Hyun⁵²³⁶,Yeom Geun Young¹²³⁴⁵^ORCID,Teherani James T.⁷⁸⁹¹⁰,Hone James¹¹⁸⁹¹⁰,Yoo Won Jong¹²³⁴^ORCID

Affiliation:

1. SKKU Advanced Institute of Nano-Technology (SAINT)

2. Sungkyunkwan University

3. Suwon

4. Korea

5. School of Advanced Materials Science and Engineering

6. 16419 Korea

7. Department of Electrical Engineering

8. Columbia University

9. New York

10. USA

11. Department of Mechanical Engineering

Abstract

WSe₂ FET oxidized by plasma. Channel resistance decreases exponentially with increasing WSe₂ work function, approaching thermal limit.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR05881H

Reference25 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional material nanophotonics

3. Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)

4. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

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