Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)-Reference-Cited by-同舟云学术

Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ-2e Method)

Published:2017-09-28 Issue:12 Volume:214 Page:1700218
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Gusakova Julia¹,Wang Xingli²,Shiau Li Lynn¹,Krivosheeva Anna³,Shaposhnikov Victor³,Borisenko Victor³,Gusakov Vasilii⁴,Tay Beng Kang¹²

Affiliation:

1. Novitas Center, Nanyang Technological University; 50 Nanyang Avenue 639798 Singapore Singapore

2. CINTRA UMI CNRS/NTU/THALES; 50 Nanyang Drive 637553 Singapore Singapore

3. Belarusian State University of Informatics and Radioelectronics; 6 P. Browka 220013 Minsk Belarus

4. Scientific-Practical Materials Research Center of NAS of Belarus; 19 P. Brovki 220072 Minsk Belarus

Funder

Ministry of Education - Singapore

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference70 articles.

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2. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides

3. Van der Waals heterostructures

4. Graphene versus MoS2: A short review

5. Transition Metal Dichalcogenides and Beyond: Synthesis, Properties, and Applications of Single- and Few-Layer Nanosheets

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