Study on fracture behavior of individual InAs nanowires using an electron-beam-drilled notch-Reference-Cited by-同舟云学术

Study on fracture behavior of individual InAs nanowires using an electron-beam-drilled notch

Published:2017 Issue:27 Volume:7 Page:16655-16661
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Choi Suji¹²³⁴⁵,Lee Jong Hoon¹²³,Pin Min Wook¹²³⁶²,Jang Dong Won⁷⁸⁹³,Hong Seong-Gu¹²³,Cho Boklae¹²³,Lee Sang Jun¹²³,Jeong Jong Seok¹⁰¹¹¹²¹³,Yi Seong-Hoon⁴⁵¹⁴³,Kim Young Heon¹²³⁶²^ORCID

Affiliation:

1. Korea Research Institute of Standards and Science

2. Yuseong-Gu

3. Republic of Korea

4. Department of Materials Science and Metallurgical Engineering

5. Kyungpook National University

6. University of Science & Technology

7. School of Mechanical, Aerospace and Systems Engineering

8. Korea Advanced Institute of Science and Technology

9. Daejeon 34141

10. Department of Chemical Engineering and Materials Science

11. University of Minnesota

12. Minneapolis

13. USA

14. Daegu 41566

Abstract

The mechanical properties and fracture behavior of individual InAs nanowires (NWs) were investigated under uniaxial tensile loading in a transmission electron microscope.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA01117B

Reference43 articles.

1. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications

2. Photonic–Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

3. Diameter dependent optical emission properties of InAs nanowires grown on Si

4. A review of helical nanostructures: growth theories, synthesis strategies and properties

5. Resolving ambiguities in nanowire field-effect transistor characterization

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