Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition-Reference-Cited by-同舟云学术

Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

Published:2014 Issue:52 Volume:4 Page:27399-27403
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Wang Wenliang¹²³,Yang Weijia¹²³,Liu Zuolian¹²³,Lin Yunhao¹²³,Zhou Shizhong¹²³,Qian Huirong¹²³,Wang Haiyan¹²³,Lin Zhiting¹²³,Li Guoqiang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640, China

4. Department of Electronic Materials

5. School of Materials Science and Engineering

Abstract

Single-crystalline AlN films with smooth surface and abrupt interface have been grown on metallic nickel (Ni) substrates by pulsed laser deposition with an in-plane epitaxial relationship of AlN[112̄0]//Ni[11̄0].

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA03581J

Reference29 articles.

1. Mechanical stabilities and properties of graphene-like aluminum nitride predicted from first-principles calculations

2. A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

3. Synthesis of meso/macroporous aluminum nitrides via aluminum alloy ceramization

4. Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

5. First-principles study of AlN nanosheets with chlorination

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-Crystalline Bulk Acoustic Wave Resonators Fabricated With AlN Film Grown by a Combination of PLD and MOCVD Methods;IEEE Electron Device Letters;2024-04

2. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation;ACS Applied Materials & Interfaces;2022-08-12

3. Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides;2D Materials;2022-02-24

4. Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics;Applied Physics Letters;2017-11-20

5. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08