Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network-Reference-Cited by-同舟云学术

Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network

Published:2018 Issue:57 Volume:8 Page:32794-32798
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Thakre Atul¹²³⁴⁵^ORCID,Kushvaha Sunil Singh¹²³⁴⁵,Kumar M. Senthil¹²³⁴⁵,Kumar Ashok¹²³⁴⁵

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR)

2. CSIR-National Physical Laboratory Campus

3. New Delhi 110012

4. India

5. CSIR-National Physical Laboratory

Abstract

An enhanced self-powered near-ultraviolet photodetection phenomenon was observed in epitaxial gallium nitride (GaN) nanorod networks grown on an intermediate layer of N:GaN on a nitridated HfO₂(N:HfO₂)/SiO₂/p-Si substrate.

Funder

Council of Scientific and Industrial Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA06101G

Reference45 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

3. GaN Nanofibers based on Electrospinning: Facile Synthesis, Controlled Assembly, Precise Doping, and Application as High Performance UV Photodetector

4. Gallium nitride devices for power electronic applications

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