Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering
2. Sungkyunkwan University
3. Gyeonggi-do
4. Republic of Korea
Abstract
Carrier confinement effect-driven channel structures promoted stability under photo-bias stress condition, which was attributed increased recombinations events between photo-ionized oxygen vacancies and charged electrons due to the effective carrier confinement.
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03766B
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