Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors-Reference-Cited by-同舟云学术

Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors

Published:2016 Issue:4 Volume:4 Page:727-735
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ahn Cheol Hyoun¹²³⁴,Cho Hyung Koun¹²³⁴,Kim Hyoungsub¹²³⁴

Affiliation:

1. School of Advanced Materials Science and Engineering

2. Sungkyunkwan University

3. Gyeonggi-do

4. Republic of Korea

Abstract

Carrier confinement effect-driven channel structures promoted stability under photo-bias stress condition, which was attributed increased recombinations events between photo-ionized oxygen vacancies and charged electrons due to the effective carrier confinement.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03766B

Reference45 articles.

1. Inorganic Semiconductors for Flexible Electronics

2. Enhanced Cyclic Performance and Lithium Storage Capacity of SnO2/Graphene Nanoporous Electrodes with Three-Dimensionally Delaminated Flexible Structure

3. An ultra-lightweight design for imperceptible plastic electronics