High-sensitivity and self-driven photodetectors based on Ge–CdS core–shell heterojunction nanowires via atomic layer deposition-Reference-Cited by-同舟云学术

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High-sensitivity and self-driven photodetectors based on Ge–CdS core–shell heterojunction nanowires via atomic layer deposition

Published:2016 Issue:21 Volume:18 Page:3919-3924
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Sun Zheng,Shao Zhibin,Wu Xiaofeng,Jiang Tianhao,Zheng Ni,Jie Jiansheng

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CE/C6CE00576D

Reference39 articles.

1. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications

2. Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices

3. Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

4. Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer

5. Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

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4. Self-Powered, Broadband (400–1800 Nm), Highly Responsive Photodetectors Based on Germanium Micropillars/Cu₂-ZnSnS₄ Heterojunctions;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

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