Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices-Reference-Cited by-同舟云学术

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Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices

Published:2012-12-20 Issue:5 Volume:3 Page:579-583
ISSN:1614-6832
Container-title:Advanced Energy Materials
language:en
Short-container-title:Adv. Energy Mater.

Author:

Li Fang-Ze,Luo Lin-Bao,Yang Qing-Dan,Wu Di,Xie Chao,Nie Biao,Jie Jian-Sheng,Wu Chun-Yan,Wang Li,Yu Shu-Hong

Publisher

Wiley

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aenm.201200868/fullpdf

Reference42 articles.

1. Logic Gates and Computation from Assembled Nanowire Building Blocks

2. High-performance thin-film transistors using semiconductor nanowires and nanoribbons

3. Experimental Determination of the Extinction Coefficient of CdTe, CdSe, and CdS Nanocrystals

4. The selective synthesis of single-crystalline CdS nanobelts and nanowires by thermal evaporation at lower temperature

5. Formation Process of CdS Nanorods via Solvothermal Route

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4. Optically-controlled resistive switching effects of CdS nanowire memtransistor*;Chinese Physics B;2021-11-01

5. Perovskite Core–Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation;ACS Nano;2020-09-10

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