Broadband photoelectric tunable quantum dot based resistive random access memory-Reference-Cited by-同舟云学术

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Broadband photoelectric tunable quantum dot based resistive random access memory

Published:2020 Issue:6 Volume:8 Page:2178-2185
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Zhiliang¹²³⁴⁵^ORCID,Yu Yu¹²³⁴⁵,Jin Lufan¹²³⁴⁵,Li Yifan¹²³⁴⁵^ORCID,Li Qingyan¹²³⁴⁵^ORCID,Li Tengteng¹²³⁴⁵,Li Jie¹²³⁴⁵^ORCID,Zhao Hongliang¹²³⁴⁵^ORCID,Zhang Yating¹²³⁴⁵^ORCID,Dai Haitao⁶⁷⁴⁸⁹,Yao Jianquan¹²³⁴⁵

Affiliation:

1. Key Laboratory of Opto-Electronics Information Technology (Tianjin University)

2. Ministry of Education

3. School of Precision Instruments and Opto-Electronics Engineering

4. Tianjin University

5. Tianjin 300072

6. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology

7. School of Science

8. Tianjin

9. China

Abstract

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Tianjin University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06230K

Reference42 articles.

1. Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

2. Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing

3. High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

4. Light-Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

5. Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

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